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GE IS200FGPAG1A IS200FGPAG1APR1 Gate Pulse Amplifier Board

Brand: General Electric
Model Number: IS200FGPAG1A IS200FGPAG1APR1
Type: Gate Pulse Amplifier Board
Product Origin: USA
Payment: T/T, Western Union, Credit Card
Price: USD 120
Dimensions: 200 mm x 100 mm x 40 mm
Weight: 0.5 kg
Warranty: 12 months

  • Product Details

The GE IS200FGPAG1A and GE IS200FGPAG1APR1 function as gate pulse amplifier boards for exciter systems. These modules belong to the Mark VI series from General Electric. They amplify low-level control signals for thyristor gate firing. Consequently, these boards enable precise control of exciter output voltage and current.

Technical Specifications

The table below lists the precise parameters for the GE IS200FGPAG1A and IS200FGPAG1APR1 .

Parameter Specification
Manufacturer General Electric (GE)
Full Model Numbers GE IS200FGPAG1A , GE IS200FGPAG1APR1
Product Category Gate Pulse Amplifier Board NSFP
Dimensions (H x W x D) 3.0 cm x 16.0 cm x 27.0 cm
Weight 0.52 kg (1.15 lbs)
Primary Interface One 64-pin backplane connector and fiber optic inputs
Amplifier Channels 6 independent gate drive channels
Component Count Approximately 200 resistors and 100 capacitors
Energy Storage Six 100 µF electrolytic capacitors
Output Current 2 A peak per channel into gate circuit
Operating Temperature -30°C to +65°C

Functional Design and Gate Pulse Amplification

The GE IS200FGPAG1APR1 connects directly to the exciter backplane of the cabinet. It receives low-power firing pulses from the main controller. Then, this board amplifies each pulse to drive thyristor gates reliably. Each channel includes optical isolation for high voltage protection. Therefore, the IS200FGPAG1A ensures accurate firing of power semiconductors.

Installation and Compatibility Notes

You must verify fiber optic cable connections before powering this amplifier. The GE IS200FGPAG1A fits exclusively into Mark VI series exciter cabinets. Always replace faulty units with identical GE board revisions. Additionally, check the gate resistor values against thyristor specifications. This practice prevents gate circuit damage from excessive current.

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